1. | FAGAN, S B ; MENEZES, V. ; ZANELLA, I ; MOTA, R ; ROCHA, A. R. ; FAZZIO, A.. Electronic, Structural and Transport Properties of Nicotinamide and Ascorbic Acid Interacting with Carbon Nanotubes. Em: 2008 MRS Fall Meeting, v. 1142, p. 15, 2009. |
1. | POLO, A. S.; Murakami Iha, Neyde Yukie ; Garcia, C. G. ; Itokazu, Melina Kayoko. Energy Conversion, from Photosensors to Dye Sensitized Solar Cells. Em: CRC International Symposium on Photochemistry @ Interfaces, 2002. |
1. | DALPIAN, G M ; SILVA, A J R da ; FAZZIO, A.. Surface Degrees of Freedom on the Si(100) Surface. Em: 3rd Brazilian/German Workshop on Applied Surface Science, 2001. |
2. | DALPIAN, G M ; VENEZUELA, P ; FAZZIO, A. ; SILVA, A J R da. Theoretical Study of the Adsorption of Ge Atoms at Single-Height Si(100) Steps. Em: 10th Brazilian Workshop on Semiconductor Physics, 2001. |
3. | FAZZIO, A.; SILVA, A J R da ; BAIERLE, R J ; FAGAN, S B ; MOTA, R.. Effects of Silicon Doping on the Electronic and Structural Properties of Carbon Nanotubes. Em: 2001 MRS Spring Meeting, 2001. |
4. | FAZZIO, A.; VENEZUELA, P ; DALPIAN, G M ; SILVA, A J R da. Systematical Study of the SiGe Alloy and its Intrinsic Defects. Em: 2001 March Meeting of the APS, 2001. |
5. | ORELLANA, W ; SILVA, A J R da ; FAZZIO, A.. First Principles Calculations of O2 Diffusion in SiO2. Em: 2001 March Meeting of the APS, 2001. |
6. | ORELLANA, W ; SILVA, A J R da ; FAZZIO, A.. First Principles Calculations of O2 Diffusion in SiO2. Em: 10th Brazilian Workshop on Semiconductor Physics, 2001. |
7. | SILVA, A J R da ; DALPIAN, G M ; JANOTTI, A. ; FAZZIO, A.. Theoretical Studies of Small Ge Structures on Si(100). Em: 2001 March Meeting of the APS, 2001. |
8. | SILVEIRA, M. G. ; FAZZIO, A. ; KINTOP, J. A. ; PAIVA, G. ; SILVA, A J R da. Theoretical Study of Si Nanostructures Deposited on the Si(100). Em: 10th Brazilian Workshop on Semiconductor Physics, 2001. |
9. | VENEZUELA, P ; DALPIAN, G M ; SILVA, A J R da ; FAZZIO, A.. A Systematical Study of the SiGe Alloy and its Intrinsic Defects. Em: 2001 MRS Spring Meeting, 2001. |
10. | VENEZUELA, P ; DALPIAN, G M ; SILVA, A J R da ; FAZZIO, A.. A Systematical Study of the SiGe Alloy and its Intrinsic Defects. Em: 10th Brazilian Workshop on Semiconductor Physics, 2001. |
1. | FAGAN, S B ; SARTOR, D. S. ; PERIPOLLI, S. B. ; MOTA, R. ; BAIERLE, R J ; SILVA, A J R da ; FAZZIO, A.. Stability Investigation and Thermal Behavior of Multi-Walled Carbon and Silicon Nanotubes. Em: MRS Fall Meeting, 2000. |
2. | FAZZIO, A.; JUSTO, J. F. ; ANTONELLI, A. The Role of Core Reconstruction Energy on the Mobility of Dislocations in Semiconductors. Em: 25th International Conference on the Physics of Semiconductors, 2000. |
3. | JUSTO, J. F. ; ANTONELLI, A ; FAZZIO, A.. The Energetics of Dislocation Cores in Semiconductors and their Role on Dislocation Mobility. Em: 9th International Conference on Shallow-Level Centers in Semiconductors, 2000. |
4. | JUSTO, J. F. ; SCHMIDT, T. M. ; FAZZIO, A. ; ANTONELLI, A. Segregation of Dopant Atoms on Extended Defects in Semiconductors. Em: 9th International Conference on Shallow-Level Centers in Semiconductors, 2000. |
5. | SILVA, A J R da ; BAIERLE, R. J. ; MOTA, R. ; FAZZIO, A.. Electronic and Vibrational Properties of Native Defects in Ge. Em: 9th International Conference on Shallow-Level Centers in Semiconductors, 2000. |
6. | SILVA, A J R da ; DALPIAN, G M ; JANOTTI, A. ; FAZZIO, A.. Small Ge Structures on the Si(100) Surface. Em: 19th European Conference on Surface Science, 2000. |
7. | SILVA, A J R da ; DALPIAN, G M ; JANOTTI, A. ; FAZZIO, A.. Small Ge Structures on the Si(100) Surface. Em: X Workshop on Computational Materials Science, 2000. |
8. | SILVA, A J R da ; VENEZUELA, P ; DALPIAN, G M ; SILVA, C. ; FAZZIO, A.. Ab Initio Studies of the Si(1-x)Ge(x) Alloy and its Intrinsic Defects. Em: X Workshop on Computational Materials Science, 2000. |
(*) Relatório criado com produções desde 2000 até 2024
Data de processamento: 01/09/2024 15:51:24